Fundamental mode operation of high-power InGaAs/GaAs/AlGaAs laser arrays

J. S. Tsang*, D. C. Liou, Chia-Ming Tsai, C. P. Lee, Feng Yuh Juang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new stable fundamental mode operation of a ridge wave guide laser array has been fabricated by introducing absorption regions in the laser stripes except the central one. The structure may be considered as an integrated injection locking array or the distributed saturable absorption laser array. The threshold current is typically 40 mA and the maximum power is more than 150 mW for laser arrays with five elements. The single lobed far field pattern is centered at 0° with a full width at half maximum of 2° at I = 1.5 I th.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages24-26
Number of pages3
ISBN (Print)0819410136
DOIs
StatePublished - 1 Dec 1992
EventOptoelectronic Component Technologies - Hsinchu, Taiwan
Duration: 16 Dec 199218 Dec 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1813
ISSN (Print)0277-786X

Conference

ConferenceOptoelectronic Component Technologies
CityHsinchu, Taiwan
Period16/12/9218/12/92

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  • Cite this

    Tsang, J. S., Liou, D. C., Tsai, C-M., Lee, C. P., & Juang, F. Y. (1992). Fundamental mode operation of high-power InGaAs/GaAs/AlGaAs laser arrays. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 24-26). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1813). Publ by Int Soc for Optical Engineering. https://doi.org/10.1117/12.131230