Functionalized single-walled carbon-nanotube-blended P3HT-based thin-film transistors with multiwalled carbon-nanotube source and drain electrodes

Chia Hao Chang*, Chao-Hsin Chien

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We demonstrate the superior performance of thin-film transistors with a functionalized single-walled carbon-nanotube-blended poly(3-hexylthiophene) (F-SWCNT-P3HT) channel and multiwalled CNT source and drain electrodes (MWCNT S/Ds). Compared with transistors with a P3HT channel and gold electrodes, the mobility of transistors with an F-SWCNT-P3HT channel and MWCNT S/Ds is increased by more than one order of magnitude, i.e., from 0.0052 to 0.072 cm 2/V ċ s. This improvement results not only from the well-known fast carrier transport assisted by the blend of F-SWCNTs but also, more importantly, from the reduced contact resistance between P3HT and MWCNT S/Ds.

Original languageEnglish
Article number6012504
Pages (from-to)1457-1459
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number10
DOIs
StatePublished - 1 Oct 2011

Keywords

  • Carbon nanotubes (CNTs)
  • functionalized single-walled carbon nanotubes (F-SWCNTs)
  • multiwalled carbon nanotube source and drain electrodes (MWCNT S/Ds)
  • organic thin-film transistors (OTFTs)
  • poly(3-hexylthiophene) (P3HT)

Fingerprint Dive into the research topics of 'Functionalized single-walled carbon-nanotube-blended P3HT-based thin-film transistors with multiwalled carbon-nanotube source and drain electrodes'. Together they form a unique fingerprint.

  • Cite this