Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility

D. S. Yu*, K. C. Chiang, C. F. Cheng, Albert Chin, Chunxiang Zhu, M. F. Li, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations


We have integrated the low work function NiSi:Hf gate on high-κ LaAlO3 and on smart-cut Ge-on-insulator (SC-GOI) n-MOSFETs. At 1.4-nm equivalent oxide thickness, the NiSi:Hf-LaAlO3/SC-GOI n-MOSFET has comparable gate leakage current with the control Al gate on LaAlO3-Si MOSFETs that is ∼5 orders of magnitude lower than SiO2. In addition, the LaAlO3/SC-GOI n-MOSFET with a metal-like fully NiSi:Hf gate has high peak electron mobility of 398 cm2/Vs and 1.7 times higher than LaAlO3-Si devices.

Original languageEnglish
Pages (from-to)559-561
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - 1 Aug 2004

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