Fully silicided NiSi gate on La 2 O 3 MOSFETs

C. Y. Lin, M. W. Ma, Albert Chin*, Y. C. Yeo, Chunxiang Zhu, M. F. Li, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


We have fabricated the fully silicided NiSi on La 2 O 3 for n- and p-MOSFETs. For 900°C fully silicided CoSi 2 on La 2 O 3 gate dielectric with 1.5 nm EOT, the gate dielectric has large leakage current by possible excess Co diffusion at high silicidation temperature. In sharp contrast, very low gate leakage current density of 2 × 10 -4 A/cm 2 at 1 V is measured for 400°C formed fully silicided NiSi and comparable with Al gate. The extracted work function of NiSi was 4.42 eV, and the corresponding threshold voltages are 0.12 and -0.70 V for respective n- and p-MOSFETs. Electron and hole mobilities of 156 and 44 cm 2 /V-s are obtained for respective n- and p-MOSFETs, which are comparable with the HfO 2 MOSFETs without using H 2 annealing.

Original languageEnglish
Pages (from-to)348-350
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
StatePublished - 1 May 2003


  • CoSi
  • La O
  • NiSi

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