Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs

D. S. Yu*, C. H. Wu, C. H. Huang, Albert Chin, W. J. Chen, Chunxiang Zhu, M. F. Li, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

We have fabricated the fully silicided NiSi and germanided MGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO 2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi 1-xGe x. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.

Original languageEnglish
Pages (from-to)739-741
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number12
DOIs
StatePublished - 1 Dec 2003

Keywords

  • MOSFET
  • NiGe
  • NiSi

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    Yu, D. S., Wu, C. H., Huang, C. H., Chin, A., Chen, W. J., Zhu, C., Li, M. F., & Kwong, D. L. (2003). Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs. IEEE Electron Device Letters, 24(12), 739-741. https://doi.org/10.1109/LED.2003.819274