Fully monolithic integrated twin dipole antenna mixer on a GaAs substrate

K. L. Deng*, Chin-Chun Meng, S. S. Lu, H. D. Lee, H. Wang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The first fully monolithic X-band twin-dipole antenna mixer consisting of a uni-planar twin-dipole antenna and a GaAs MESFET single gate mixer on the same GaAs substrate fabricated by monolithic microwave integrated circuit technology (MMIC) is reported. The total chip size is 5×5 mm 2. This circuit received an RF signal of 10 GHz and down-converted it to an IF signal of 1 GHz with a worse case conversion loss of 22 dB, defined as the ratio of output IF power dissipated in a 50 load to the RF available power received by the twin-dipole antenna. The experimental results demonstrate that this topology has potential applications in future low-cost millimeter-wave receivers for smart munitions seekers and automotive-collision-avoidance radars.

Original languageEnglish
Number of pages1
DOIs
StatePublished - 1 Dec 2000
Event12 Asia-Pacific Microwave Conference - Sydney, Australia
Duration: 3 Dec 20006 Dec 2000

Conference

Conference12 Asia-Pacific Microwave Conference
CitySydney, Australia
Period3/12/006/12/00

Fingerprint Dive into the research topics of 'Fully monolithic integrated twin dipole antenna mixer on a GaAs substrate'. Together they form a unique fingerprint.

Cite this