The first fully monolithic X-band twin-dipole antenna mixer consisting of a uni-planar twin-dipole antenna and a GaAs MESFET single gate mixer on the same GaAs substrate fabricated by monolithic microwave integrated circuit technology (MMIC) is reported. The total chip size is 5×5 mm 2. This circuit received an RF signal of 10 GHz and down-converted it to an IF signal of 1 GHz with a worse case conversion loss of 22 dB, defined as the ratio of output IF power dissipated in a 50 load to the RF available power received by the twin-dipole antenna. The experimental results demonstrate that this topology has potential applications in future low-cost millimeter-wave receivers for smart munitions seekers and automotive-collision-avoidance radars.
|Number of pages||1|
|State||Published - 1 Dec 2000|
|Event||12 Asia-Pacific Microwave Conference - Sydney, Australia|
Duration: 3 Dec 2000 → 6 Dec 2000
|Conference||12 Asia-Pacific Microwave Conference|
|Period||3/12/00 → 6/12/00|