Fully monolithic integrated twin dipole antenna mixer on a GaAs substrate

K. L. Deng; Chin-Chun Meng; S. S. Lu; H. D. Lee; H. Wang

doi:10.1109/APMC.2000.925717

Fully monolithic integrated twin dipole antenna mixer on a GaAs substrate

K. L. Deng^*, Chin-Chun Meng, S. S. Lu, H. D. Lee, H. Wang

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The first fully monolithic X-band twin-dipole antenna mixer consisting of a uni-planar twin-dipole antenna and a GaAs MESFET single gate mixer on the same GaAs substrate fabricated by monolithic microwave integrated circuit technology (MMIC) is reported. The total chip size is 5×5 mm 2. This circuit received an RF signal of 10 GHz and down-converted it to an IF signal of 1 GHz with a worse case conversion loss of 22 dB, defined as the ratio of output IF power dissipated in a 50 load to the RF available power received by the twin-dipole antenna. The experimental results demonstrate that this topology has potential applications in future low-cost millimeter-wave receivers for smart munitions seekers and automotive-collision-avoidance radars.

Original language	English
Number of pages	1
DOIs	https://doi.org/10.1109/APMC.2000.925717
State	Published - 1 Dec 2000
Event	12 Asia-Pacific Microwave Conference - Sydney, Australia Duration: 3 Dec 2000 → 6 Dec 2000

Conference

Conference	12 Asia-Pacific Microwave Conference
City	Sydney, Australia
Period	3/12/00 → 6/12/00

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10.1109/APMC.2000.925717

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title = "Fully monolithic integrated twin dipole antenna mixer on a GaAs substrate",

abstract = "The first fully monolithic X-band twin-dipole antenna mixer consisting of a uni-planar twin-dipole antenna and a GaAs MESFET single gate mixer on the same GaAs substrate fabricated by monolithic microwave integrated circuit technology (MMIC) is reported. The total chip size is 5×5 mm 2. This circuit received an RF signal of 10 GHz and down-converted it to an IF signal of 1 GHz with a worse case conversion loss of 22 dB, defined as the ratio of output IF power dissipated in a 50 load to the RF available power received by the twin-dipole antenna. The experimental results demonstrate that this topology has potential applications in future low-cost millimeter-wave receivers for smart munitions seekers and automotive-collision-avoidance radars.",

author = "Deng, {K. L.} and Chin-Chun Meng and Lu, {S. S.} and Lee, {H. D.} and H. Wang",

year = "2000",

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doi = "10.1109/APMC.2000.925717",

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T1 - Fully monolithic integrated twin dipole antenna mixer on a GaAs substrate

AU - Deng, K. L.

AU - Meng, Chin-Chun

AU - Lu, S. S.

AU - Lee, H. D.

AU - Wang, H.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The first fully monolithic X-band twin-dipole antenna mixer consisting of a uni-planar twin-dipole antenna and a GaAs MESFET single gate mixer on the same GaAs substrate fabricated by monolithic microwave integrated circuit technology (MMIC) is reported. The total chip size is 5×5 mm 2. This circuit received an RF signal of 10 GHz and down-converted it to an IF signal of 1 GHz with a worse case conversion loss of 22 dB, defined as the ratio of output IF power dissipated in a 50 load to the RF available power received by the twin-dipole antenna. The experimental results demonstrate that this topology has potential applications in future low-cost millimeter-wave receivers for smart munitions seekers and automotive-collision-avoidance radars.

AB - The first fully monolithic X-band twin-dipole antenna mixer consisting of a uni-planar twin-dipole antenna and a GaAs MESFET single gate mixer on the same GaAs substrate fabricated by monolithic microwave integrated circuit technology (MMIC) is reported. The total chip size is 5×5 mm 2. This circuit received an RF signal of 10 GHz and down-converted it to an IF signal of 1 GHz with a worse case conversion loss of 22 dB, defined as the ratio of output IF power dissipated in a 50 load to the RF available power received by the twin-dipole antenna. The experimental results demonstrate that this topology has potential applications in future low-cost millimeter-wave receivers for smart munitions seekers and automotive-collision-avoidance radars.

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DO - 10.1109/APMC.2000.925717

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