Fully-depleted silicon on oxide transistor and compact model

Chenming Hu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

This chapter explains why the limits of scaling faced by the bulk planar MOS transistors can be overcome with the ultra-thin-body transistor structures, of which the fully-depleted silicon-on oxide (FDSOI) is one and the FinFET is another. It also explains what constitutes a good compact model and the role that the BSIM models play in the semiconductor industry.

Original languageEnglish
Title of host publicationIndustry Standard FDSOI Compact Model BSIM-IMG for IC Design
PublisherElsevier
Pages1-13
Number of pages13
ISBN (Electronic)9780081024010
ISBN (Print)9780081024027
DOIs
StatePublished - 1 Jan 2019

Keywords

  • BSIM
  • CMOS transistor
  • Compact model
  • FDSOI
  • IC design
  • Silicon on oxide
  • Ultrathin body
  • Wafer

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