We study, for the first time, full chip power benefits of negative capacitance FET (NCFET) device technology for commercial-grade GDSII-level designs. Owing to sub-60mV/decade characteristics, NCFETs provide significantly higher drive-current than standard FETs at a given voltage, enabling significant iso-performance power savings by lowering VDD. We use SPICE models of NCFETs corresponding to 14nm node, which incorporate experimentally calibrated models of ferroelectric. We then characterize NCFET-based standard-cell libraries followed by full-chip NCFET-based GDSII-level design implementations of different benchmarks. Our results show that even with increased device capacitance, we can achieve about 4× (up to 74.7%) full-chip power reduction with low-VDD NCFETs over nominal VDD baseline FETs at iso-performance. The power savings are consistent across multiple benchmarks and are higher for low power designs.