Frequency-dependent capacitance reduction in high-k AlTiO x and Al 2O 3 gate dielectrics from IF to RF frequency range

S. B. Chen, C. H. Lai, K. T. Chan, Albert Chin*, J. C. Hsieh, J. Liu, J. H. Chou

*Corresponding author for this work

Research output: Contribution to journalArticle

46 Scopus citations

Abstract

We have characterized the capacitance and loss tangent for high-k Al 2O 3 and AlTiO x gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO 2 was demonstrated individually by the proposed Al 2O 3 and AlTiO x gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO 2 from 100 KHz to GHz. These results suggest that both Al 2O 3 and AlTiO x are suitable for next generation MOSFET application into RF frequency regime.

Original languageEnglish
Pages (from-to)203-205
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number4
DOIs
StatePublished - 1 Apr 2002

Keywords

  • Dielectric constant
  • Frequency dependence
  • High-k
  • Loss tangent
  • RF

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