Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots

Sheng-Di Lin; V. V. Ilchenko; V. V. Marin; K. Y. Panarin; A. A. Buyanin; O. V. Tretyak

doi:10.1063/1.2975169

Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots

Sheng-Di Lin, V. V. Ilchenko, V. V. Marin, K. Y. Panarin, A. A. Buyanin, O. V. Tretyak

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The frequency dependence of negative differential capacitance (NDC) in Schottky diodes with InAs quantum dots (QDs) is studied. The measured peak capacitances of NDC decay rapidly as the testing frequencies are higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.

Original language	English
Article number	103103
Journal	Applied Physics Letters
Volume	93
Issue number	10
DOIs	https://doi.org/10.1063/1.2975169
State	Published - 19 Sep 2008

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abstract = "The frequency dependence of negative differential capacitance (NDC) in Schottky diodes with InAs quantum dots (QDs) is studied. The measured peak capacitances of NDC decay rapidly as the testing frequencies are higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.",

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AU - Buyanin, A. A.

AU - Tretyak, O. V.

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AB - The frequency dependence of negative differential capacitance (NDC) in Schottky diodes with InAs quantum dots (QDs) is studied. The measured peak capacitances of NDC decay rapidly as the testing frequencies are higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.

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