Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots

Sheng-Di Lin, V. V. Ilchenko, V. V. Marin, K. Y. Panarin, A. A. Buyanin, O. V. Tretyak

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The frequency dependence of negative differential capacitance (NDC) in Schottky diodes with InAs quantum dots (QDs) is studied. The measured peak capacitances of NDC decay rapidly as the testing frequencies are higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.

Original languageEnglish
Article number103103
JournalApplied Physics Letters
Volume93
Issue number10
DOIs
StatePublished - 19 Sep 2008

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