Free-standing a-plane GaN substrates grown by HVPE

Yin Hao Wu*, Yen Hsien Yeh, Kuei Ming Chen, Yu Jen Yang, Wei-I Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A-plane free-standing GaN was grown on a-plane GaN templates by HVPE. A-plane GaN templates were grown on r-plane sapphire by MOCVD with multilayer high-low-high temperature AlN buffer layers. A regrowth method was used for growing GaN through HVPE. First, GaN was grown on a-plane GaN templates, followed by separating the a-plane GaN film from r-plane sapphire using LLO. Then, the GaN films were regrown using HVPE. The resulting free-standing GaN contained some voids, which causes to release the stress.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VII
DOIs
StatePublished - 16 Apr 2012
EventGallium Nitride Materials and Devices VII - San Francisco, CA, United States
Duration: 23 Jan 201226 Jan 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8262
ISSN (Print)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices VII
CountryUnited States
CitySan Francisco, CA
Period23/01/1226/01/12

Keywords

  • Hydride vapor phase epitaxy
  • non-polar Gallium Nitride
  • Semiconducting III-V materials

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