Fourier transform infrared spectroscopic study of oxide films grown in pure n2О

Tien-Sheng Chao, Wen Ho Chen, Tan Fu Lei

Research output: Contribution to journalArticle

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Abstract

The properties of the oxide films grown by pure N2О were studied in this work. A two-layer model, considering a N2О oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2О thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Å.

Original languageEnglish
Pages (from-to)2370-2373
Number of pages4
JournalJapanese Journal of Applied Physics
Volume34
Issue number5R
DOIs
StatePublished - 1 Jan 1995

Keywords

  • Ellipsometer
  • FTIR
  • NO
  • Oxide

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