Forming tapered pattern by Cu electrodeposition through mask on Ni seed layer for thin-film transistors

Shrane Ning Jenq*, Chi Chao Wan, Yung Yun Wang, Hung Wei Li, Po-Tsun Liu, Jing Hon Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The fabrication of Cu gates for thin-film transistors (TFTs) by electrodeposition through mask on a Ni layer has been developed. After pretreatment in acid sulfate solution, a Cu deposit acquires the property of good adhesion on a Ni layer. Organic additives [e.g., poly(ethylene glycol) (PEG), bis(3-sodiumsulfopropyl) disulfide (SPS)] were used to create the desired tapered shape of the deposited Cu pattern on a Ni layer. Furthermore, a multilayer Cu gate for TFTs was fabricated after the selective etching of the nickel layer. The new method provides an alternative wet process for fabricating Cu gates for TFTs.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number42-45
DOIs
StatePublished - 10 Nov 2006

Keywords

  • Acid pretreatment
  • Cu
  • Electrodeposltion
  • Ni seed layer
  • Thin-film transistors

Fingerprint Dive into the research topics of 'Forming tapered pattern by Cu electrodeposition through mask on Ni seed layer for thin-film transistors'. Together they form a unique fingerprint.

  • Cite this