Forming gas annealing on physical characteristics and electrical properties of Sr0.8Bi2Ta2O9/Al 2O3/Si capacitors

Bang Chiang Lan, Jung Jui Hsu, San-Yuan Chen*, Jong Shing Bow

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The effect of forming gas annealing (FGA) treatment on the ferroelectric properties of Sr0.8Bi2Ta2O9 (SBT) ferroelectric film constructed on Al2O3/Si was investigated. Due to the diffusion of hydrogen ions, a rapid decrease in the dielectric constant was observed. It was found that FGA showed a positive effect on the leakage current of metal-ferroelectric-insulator-semiconductor (MFIS) in contrast to that of a metal/ferroelectric/metal (MFM) structure.

Original languageEnglish
Pages (from-to)1877-1881
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number3
DOIs
StatePublished - 1 Aug 2003

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