Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows

Chun-Hu Cheng, Albert Chin, Hsiao-Hsuan Hsu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Optimal device integrity was achieved in Ni/SiGeOx/TiOy/TaN resistive memory by using a formingfree switch with a low switching power of 790 mu W, stable endurance of 10(4) cycles, optimal retention time of 10(5) s, resistance window of at least 1150x, and tight current distributions at 85 degrees C. These characteristics are attributed to the low current switching obtained using SiGeOx with a high oxygen vacancy density and highly defective TiOy grain boundaries.

Original languageEnglish
Pages (from-to)7916-7919
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number12
StatePublished - Dec 2019


  • Resistive Memory
  • SiGeOx
  • TiOy
  • Current Distribution
  • Switching Power

Cite this