Formation of ultra-shallow junctions by plasma doping

Kazuo Tsutsui*, Yuichiro Sasaki, Cheng Guo Jin, Hideki Tamura, Katsumi Okashita, Hiroyuki Ito, Bunji Mizuno, Hendriansyah Sauddin, Kenta Majima, Takahisa Satoh, Yotaro Fukagawa, Kuniyuki Kakushima, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Shallow junctions doped with boron were formed by plasma doping (PD) combined with rapid thermal process such as spike-RTA, flash lamp annealing and laser annealing. The process of amrphization of substrate surface using He gas plasma was used in the PD process so that obtained junctions were superior to those formed by conventional ion implantation from the viewpoints of shallowness, abruptness and low sheet resistance. The electrical properties of p+ doped layers and p+/n junctions were evaluated through Hall measurement and I- V characteristics of the diodes. The leakage current of the p+/n junctions formed by the PD was almost the same level as those formed by ion implantation.

Original languageEnglish
Title of host publicationProceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006
Pages232-241
Number of pages10
StatePublished - 2006
Event5th International Conference on Semiconductor Technology, ISTC 2006 - Shanghai, China
Duration: 21 Mar 200623 Mar 2006

Publication series

NameProceedings - Electrochemical Society
VolumePV 2006-03

Conference

Conference5th International Conference on Semiconductor Technology, ISTC 2006
CountryChina
CityShanghai
Period21/03/0623/03/06

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