TY - JOUR
T1 - Formation of thin-film transistors with a polycrystalline hetero-structure channel layer
AU - Juang, Miin Horng
AU - Tsai, I. Shen
AU - Jang, S. L.
AU - Cheng, Huang-Chung
PY - 2008/8/1
Y1 - 2008/8/1
N2 - A thin-film transistor (TFT) with a polycrystalline Si/SiC hetero-structure channel layer has been proposed. For the conventional polycrystalline silicon (poly-Si) channel layer, the leakage current would be considerably increased with increase of the negative gate bias voltage. However, when a polycrystalline Si/SiC stacked channel layer is employed, the leakage current exhibits just a slight increase with increase of the negative gate bias voltage. As a result, the leakage current can be largely suppressed to a low level without degrading the on-state current. Moreover, when the channel length is further scaled down to 1 μm and the gate oxide is reduced to 60 nm thickness, the conventional poly-Si TFT device shows even more obvious deterioration of the leakage current. Instead, for the TFT device with a polycrystalline Si/SiC channel layer, no considerable degradation of the leakage characteristics is caused.
AB - A thin-film transistor (TFT) with a polycrystalline Si/SiC hetero-structure channel layer has been proposed. For the conventional polycrystalline silicon (poly-Si) channel layer, the leakage current would be considerably increased with increase of the negative gate bias voltage. However, when a polycrystalline Si/SiC stacked channel layer is employed, the leakage current exhibits just a slight increase with increase of the negative gate bias voltage. As a result, the leakage current can be largely suppressed to a low level without degrading the on-state current. Moreover, when the channel length is further scaled down to 1 μm and the gate oxide is reduced to 60 nm thickness, the conventional poly-Si TFT device shows even more obvious deterioration of the leakage current. Instead, for the TFT device with a polycrystalline Si/SiC channel layer, no considerable degradation of the leakage characteristics is caused.
UR - http://www.scopus.com/inward/record.url?scp=51849126869&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/23/8/085017
DO - 10.1088/0268-1242/23/8/085017
M3 - Article
AN - SCOPUS:51849126869
VL - 23
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 8
ER -