Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N 2 and O 2 ambient

Chih Wei Hu, Ting Chang Chang*, Chun Hao Tu, Cheng Neng Chiang, Chao Cheng Lin, Min Chen Chen, Chun Yen Chang, Simon M. Sze, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N 2 and O 2 ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi 2 and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N 2 ambient has smaller memory window and better retention characteristics than in O 2 ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory.

Original languageEnglish
Pages (from-to)7304-7307
Number of pages4
JournalThin Solid Films
Volume518
Issue number24
DOIs
StatePublished - 1 Oct 2010

Keywords

  • Co-sputtering
  • Nanocrystals
  • Nonvolatile memory
  • Thin film

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    Hu, C. W., Chang, T. C., Tu, C. H., Chiang, C. N., Lin, C. C., Chen, M. C., Chang, C. Y., Sze, S. M., & Tseng, T-Y. (2010). Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N 2 and O 2 ambient. Thin Solid Films, 518(24), 7304-7307. https://doi.org/10.1016/j.tsf.2010.04.098