Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer

Chin-Chun Meng*, G. R. Liao, S. S. Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Inexpensive technology for the fabrication of submicron T-gates by using the flowing property of normal 1 μm UV photolithography is reported. The submicron flowing gate process was applied successfully to the fabrication of AlGaAs/InGaAs/GaAs PHEMT field effect transistors.

Original languageEnglish
Pages (from-to)1045-1046
Number of pages2
JournalElectronics Letters
Volume37
Issue number16
DOIs
StatePublished - 2 Aug 2001

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