Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer

Chin-Chun Meng; G. R. Liao; S. S. Lu

doi:10.1049/el:20010718

Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer

Chin-Chun Meng^*, G. R. Liao, S. S. Lu

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Inexpensive technology for the fabrication of submicron T-gates by using the flowing property of normal 1 μm UV photolithography is reported. The submicron flowing gate process was applied successfully to the fabrication of AlGaAs/InGaAs/GaAs PHEMT field effect transistors.

Original language	English
Pages (from-to)	1045-1046
Number of pages	2
Journal	Electronics Letters
Volume	37
Issue number	16
DOIs	https://doi.org/10.1049/el:20010718
State	Published - 2 Aug 2001

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title = "Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer",

abstract = "Inexpensive technology for the fabrication of submicron T-gates by using the flowing property of normal 1 μm UV photolithography is reported. The submicron flowing gate process was applied successfully to the fabrication of AlGaAs/InGaAs/GaAs PHEMT field effect transistors.",

author = "Chin-Chun Meng and Liao, {G. R.} and Lu, {S. S.}",

year = "2001",

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doi = "10.1049/el:20010718",

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T1 - Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer

AU - Meng, Chin-Chun

AU - Liao, G. R.

AU - Lu, S. S.

PY - 2001/8/2

Y1 - 2001/8/2

N2 - Inexpensive technology for the fabrication of submicron T-gates by using the flowing property of normal 1 μm UV photolithography is reported. The submicron flowing gate process was applied successfully to the fabrication of AlGaAs/InGaAs/GaAs PHEMT field effect transistors.

AB - Inexpensive technology for the fabrication of submicron T-gates by using the flowing property of normal 1 μm UV photolithography is reported. The submicron flowing gate process was applied successfully to the fabrication of AlGaAs/InGaAs/GaAs PHEMT field effect transistors.

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U2 - 10.1049/el:20010718

DO - 10.1049/el:20010718

M3 - Article

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SP - 1045

EP - 1046

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

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ER -