Abstract
Inexpensive technology for the fabrication of submicron T-gates by using the flowing property of normal 1 μm UV photolithography is reported. The submicron flowing gate process was applied successfully to the fabrication of AlGaAs/InGaAs/GaAs PHEMT field effect transistors.
Original language | English |
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Pages (from-to) | 1045-1046 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 37 |
Issue number | 16 |
DOIs | |
State | Published - 2 Aug 2001 |