Formation of submicron epitaxial islands of Pd2Si on silicon

C. B. Boothroyd*, W. M. Stobbs, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

It has been found that annealing Pd-Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd2Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd2Si is formed with full coverage and a specific epitaxy.

Original languageEnglish
Pages (from-to)577-579
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number10
DOIs
StatePublished - 1 Dec 1987

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