Formation of stacked Ni silicide nanocrystals for nonvolatile memory application

Wei Ren Chen*, Ting Chang Chang, Po-Tsun Liu, Po Sun Lin, Chun Hao Tu, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

58 Scopus citations

Abstract

The formation of stacked Ni silicide nanocrystals by using a comixed target is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide. The memory window enough to define "1" and "0" states is obviously observed at low voltage programming conditions, and good data retention characteristics are exhibited for the nonvolatile memory application. A physical model is also proposed further to explain the saturation phenomenon of threshold voltage at different programming voltages with operation duration.

Original languageEnglish
Article number112108
JournalApplied Physics Letters
Volume90
Issue number11
DOIs
StatePublished - 23 Mar 2007

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