Buried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PIII). We call this process of making separation by implantation of oxygen (SIMOX) with implantation by PIII as separation by plasma implantation of oxygen (SPIMOX). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a nominal dose of 2 × 1017 cm-2 of oxygen was obtained in less than three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RBS) were used to characterize the wafers. Three distinct modes of microstructure development were observed after post implantation annealing. With a low oxygen dose (< 1 × 1017 cm-2), isolated silicon dioxide precipitates did not grow large enough to form a continuous oxide layer. With a high oxygen dose (> 3 × 1017 cm-2), however, a single buried oxide layer was observed. By optimizing the concentration ratio of O+ and O2 + in the plasma and the implant dose, a double oxide layer (Si/oxide/Si/oxide/Si) structure, was produced in a single implantation step.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA|
Duration: 28 Nov 1994 → 2 Dec 1994