Formation of self-organized GaN dots on Al0.11Ga0.89N by alternating supply of source precursors

Wen Cheng Ke*, Huai Ying Huang, Ching Shun Ku, Kao Hsi Yen, Ling Lee, Wei-Kuo Chen, Wu-Ching Chou, Ming Chih Lee, Wen Hsiung Chen, Wen Jen Lin, Yi Cheng Cheng, Ya Tong Cherng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The self-organized GaN dot structure is successfully grown on a slightly lattice-mismatched Al0.11Ga0.89N epilayer using flow-rate modulation epitaxy (FME) growth technique. From the variation of dot density with growth temperature, we can observe that the GaN dot growth is controlled predominately by the surface diffusion of Ga adatoms at substrate temperatures below 915°C and by re-evaporation at higher temperatures. Because of the special alternating gas supply feature in FME, during the Ga source step, it is the Ga metal that is deposited on the underlying Al0.11Ga 0.89N layer. This is because of the large lattice mismatch of 41.8% between the Ga metal (4.51 Å) and Al0.11Ga0.89N (3.18 Å). We consider that the GaN dot growth in our study is mainly through the Volmer-Weber growth mode, not the commonly used Stranski-Krastanow growth mode.

Original languageEnglish
Pages (from-to)L780-L783
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number6 B
DOIs
StatePublished - 15 Jun 2004

Keywords

  • Dot density
  • Flow-rate modulation epitaxy
  • Ga metal
  • GaN dot
  • Volmer-Weber

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