Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy

M. C. Kuo, C. S. Yang, P. Y. Tseng, J. Lee, J. L. Shen, Wu-Ching Chou, Y. T. Shih, C. T. Ku, M. C. Lee, Wei-Kuo Chen

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer-Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9-2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 108/cm2 and 109/cm2, respectively.

Original languageEnglish
Pages (from-to)533-537
Number of pages5
JournalJournal of Crystal Growth
Volume242
Issue number3-4
DOIs
StatePublished - 1 Jan 2002

Keywords

  • A1. Atomic force microscopy
  • A1. Nanostructures
  • A3. Molecular beam epitaxy
  • B2. Semiconducting II-IV materials

Fingerprint Dive into the research topics of 'Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy'. Together they form a unique fingerprint.

  • Cite this