Formation of nickel silicide on nitrogen ion implanted silicon

L. W. Cheng*, J. Y. Chen, J. C. Chen, S. L. Cheng, L. J. Chen, Bing-Yue Tsui

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The self-aligned-silicidation technique has become a crucial part of ultra-high speed CMOS technologies. Many studies on NiSi have been reported recently. NiSi possesses many advantages and appears to be a suitable candidate to replace TiSi2 in future ULSI devices. Nitrogen ion implantation has been used to suppress the boron and arsenic diffusion as well as hot-carrier degradation. In this paper, the formation of Nickel silicides on nitrogen ion implanted silicon is investigated. The phase formation of nickel silicides on nitrogen implanted (001) Si was suppressed and shifted to a higher temperature compared to that of blank sample. The presence of nitrogen ion was found to improve the crystallinity of epitaxial NiSi2. The effects of nitrogen on nickel silicide formation become more pronounced with the increase in the dose of nitrogen implantation.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
PublisherIEEE
Pages1002-1005
Number of pages4
ISBN (Print)078034538X
DOIs
StatePublished - 1 Dec 1999
EventProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn
Duration: 22 Jun 199826 Jun 1998

Publication series

NameProceedings of the International Conference on Ion Implantation Technology
Volume2

Conference

ConferenceProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
CityKyoto, Jpn
Period22/06/9826/06/98

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  • Cite this

    Cheng, L. W., Chen, J. Y., Chen, J. C., Cheng, S. L., Chen, L. J., & Tsui, B-Y. (1999). Formation of nickel silicide on nitrogen ion implanted silicon. In Proceedings of the International Conference on Ion Implantation Technology (pp. 1002-1005). (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2). IEEE. https://doi.org/10.1109/IIT.1998.813848