Formation of nickel disilicide using nickel implantation and rapid thermal annealing

Chel Jong Choi, Sung Young Chang, Young Woo Ok, Tae Yeon Seong*, H. Gan, G. Z. Pan, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS), and x-ray photoemission spectroscopy (XPS) have been used to investigate the nucleation, growth, and ripening behavior of nickel-disilicide precipitates formed by Ni implantation in an amorphous-Si layer on (100) Si and followed by a two-step annealing treatment. The TEM and XPS results show that amorphous-disilicide precipitates are formed in a depth of ∼21 nm in the amorphous-Si layer when pre-annealed at 380°C for 30 sec. It is also shown that the second-step annealing at temperatures in the range of 450-600°C causes the amorphous precipitates to transform to randomly oriented crystalline ones embedded in the amorphous-Si layer. Annealing above 550°C is shown to induce the crystallization of amorphous Si by solid-phase epitaxial growth (SPEG). It is further shown that, in a prolonged annealing at high temperatures, the disilicide has dissolved and reprecipitated on the Si surface. Based on the roles of the silicide-mediated crystallization (SMC), the dissolution and reprecipitation of silicides, and SPEG, possible mechanisms are given to explain how the surface-disilicide islands are formed during annealing at temperatures of 550-950°C.

Original languageEnglish
Pages (from-to)1072-1078
Number of pages7
JournalJournal of Electronic Materials
Issue number10
StatePublished - 1 Jan 2003


  • Ni implantation
  • Nickel disilicide
  • Secondary ion mass spectroscopy
  • Transmission electron microscopy
  • X-ray photoemission spectroscopy

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