Formation of Ni silicides on (001)Si with a thin interposing Pt layer

L. W. Cheng*, S. L. Cheng, L. J. Chen, H. C. Chien, H. L. Lee, Fu-Ming Pan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

36 Scopus citations

Abstract

An experimental study is conducted which shows that a thin interposing Pt layer was found to act as a diffusion barrier and suppress the diffusion of Ni atoms effectively at temperatures below 500 °C. It indicates that NiSi phase can be stabilized by the presence of a thin Pt layer and the thermal stability of NiSi was improved considerably. The sheet resistance maintained the same low level in a wide temperature range. NiSi was found to be the only silicide phase for the Ni/Pt bilayer on (001)Si samples after annealing at 500-800 °C.

Original languageEnglish
Pages (from-to)1176-1179
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume18
Issue number4 I
DOIs
StatePublished - 1 Jul 2000
Event46th National Symposium of the American Vacuum Society - Seatlle, WA, USA
Duration: 25 Oct 199929 Oct 1999

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