Formation of Ni germano-silicide on single crystalline Si 0.3 Ge 0.7 /Si

C. Y. Lin*, W. J. Chen, C. H. Lai, Albert Chin, J. Liu

*Corresponding author for this work

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

We have studied the Ni and Co germano-silicide on Si 0.3 Ge 0.7 /Si. The Ni germano-silicide shows a low sheet resistance of 4-6 Ω/□ on both P + N and N + P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3 × 10 -8 A/cm 2 and 2 × 10 -7 A/cm 2 are obtained for Ni germano-silicide on P + N and N + P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thicknesss observed by cross-sectional TEM.

Original languageEnglish
Pages (from-to)464-466
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number8
DOIs
StatePublished - 1 Aug 2002

Keywords

  • Co
  • Ni
  • SiGe
  • Silicide

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