Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer

Chao Cheng Lin*, Ting Chang Chang, Chun Hao Tu, Wei Ren Chen, Chih Wei Hu, Simon M. Sze, Chun Yen Chang, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this study, distributed charge trapping centers molybdenum silicide nanodots, are demonstrated. The Mo silicide nanodots were formed in the rapid thermal annealed mixed Mo-Si layer deposited by a dual electron gun system. A significant memory effect is observed through the electrical measurements, which is attributed to the formation of Mo silicide nanodots. In addition, the memory window is large enough to be identified as logic level "0" and "1" for the application on nonvolatile memory. The manufacture processes are simple and compatible with the conventional semiconductor manufacturing processes.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number7
DOIs
StatePublished - 26 May 2008

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