Formation of m-plane aln on plasma-nitrided m-plane sapphire

Zhih Cheng Ma, Kun An Chiu, Lin Lung Wei, Li Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Microwave plasma using a gas mixture of N2 and H2 has been applied for the nitridation of m-plane sapphire substrate to form a thick epitaxial AlN film. The X-ray diffraction results show that the AlN films formed on the sapphire surface by nitridation for a period from 10-60 min are in (100) orientation and have an epitaxial relationship with the substrate. The thickness of the nitride film increases with nitridation time and approaches about 0.5 μm after nitridation for 1 h, while the film surface becomes rough. The film quality is reasonably good, as evaluated with the X-ray rocking curve of (100) AlN. Faceted voids in the sapphire substrate underneath the AlN are also observed with inclined a-plane facets after nitridation.

Original languageEnglish
Article numberSC1033
JournalJapanese Journal of Applied Physics
Volume58
Issue numberSC
DOIs
StatePublished - 1 Jun 2019

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