Formation of inverted-pyramid structure by modifying laser processing parameters and acid etching time

Je Wei Lin*, En Ting Liu, Chien Hung Wu, Ing Jar Hsieh, Tien-Sheng Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

This paper is to investigate the possibility to fabricate the inverted-pyramid structure on silicon wafer base solar cell by using laser scribing technology. The UV spectrometer and SEM had also been used to observe the reflectance and microstructure of the wafer surface. In this experiment, a Q-switched Nd:YAG laser operating at wavelength of 1064nm is used to scribe on the p-type wafer surface to produce inverted-pyramid structure. In order to remove the laser damage, we used acid etching and Alkaline etching solutions to smooth the damage region and inverted pyramid structure formed, simultaneously.

Original languageEnglish
Title of host publicationStudent Posters (General) - 219th ECS Meeting
Pages67-72
Number of pages6
Edition31
DOIs
StatePublished - 1 Dec 2011
EventGeneral Student Poster Session - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number31
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceGeneral Student Poster Session - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

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