Formation of interfacial layer during reactive sputtering of hafnium oxide

Bing-Yue Tsui*, Hsiu Wei Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

57 Scopus citations

Abstract

The formation of interfacial silicon dioxide (SiO 2 ) layer during reactive sputtering of hafnium oxide was studied. The thickness of interfacial SiO 2 layer was reduced only if the bottom hafnium layer was thicker than 5 nm. It was observed that using the physical vapor deposition technique, it was difficult to totally eliminate the formation of the interfacial SiO 2 layer.

Original languageEnglish
Pages (from-to)10119-10124
Number of pages6
JournalJournal of Applied Physics
Volume93
Issue number12
DOIs
StatePublished - 15 Jun 2003

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