Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Chi Feng Weng, Hsin Chou Liu, Li Ting Chang, Sheng Kai Lee, Wei Ren Chen, Simon M. Sze, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The formation of germanium nanocrystals embedded in silicon-oxygen-nitride with distributed charge storage elements is proposed. A large memory window was observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after a high-temperature oxidized SiGeN layer. The Ge nanocrystals embedded in the SiON stack layer exhibited nonvolatile memory characteristics with the obvious threshold voltage shift under a bidirectional voltage sweep. Also, the manufacturing technology using the sequent high-temperature oxidation of the a-Si layer and the direct oxidation of the SiGeN layer is proposed, respectively, for the formation of a blocking oxide layer to enhance the performance of nonvolatile memory devices. The reliability characteristics, including retention time and endurance, are also advisable for the application of nonvolatile memory device.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume154
Issue number6
DOIs
StatePublished - 1 Aug 2007

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