Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application

Wei Ren Chen, Ting Chang Chang*, Po-Tsun Liu, Chun Hao Tu, Jui Lung Yeh, Yen Ting Hsieh, Ren You Wang, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

A new method to fabricate Ge nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application was investigated in this study. The oxidation process nucleated the Ge nanocrystals embedded in the dielectric layer was clearly observed by transmission electron microscope analysis. Moreover, an over-oxidation phenomenon for the formation of GeO2 in this work was found at higher temperature oxidation according to the X-ray photoelectron spectroscopy analysis. The obvious memory window was found in the capacitance-voltage hysteresis curve, and the program efficiency of holes was superior to electrons due to the electronic affinity of GeO2 smaller than silicon substrate for a structure of Ge nanocrystals surrounded with GeO2 layer. Furthermore, the Ge nanocrystals surrounded with GeO2 layer structure has good retention time and endurance.

Original languageEnglish
Pages (from-to)1333-1337
Number of pages5
JournalSurface and Coatings Technology
Volume202
Issue number4-7
DOIs
StatePublished - 15 Dec 2007

Keywords

  • Germanium nanocrystal
  • Germanium oxide
  • Nonvolatile memory
  • Rapid temperature oxidation

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