Abstract
We report that carbon nitride thin films can be formed by microwave plasma-enhanced chemical vapor deposition (PECVD). Gas mixtures containing CH4, H2, and NH3 in various ratios were tried as the precursors, and a Si(100) wafer was used as the substrate. The films were characterized by X-ray photoelectron spectroscopy (XPS), and electron microscopy (both SEM and TEM). A Si content of about half of the carbon content was observed when the substrate temperature exceeded 1000 °C. Microscopic investigation revealed the coexistence of large-grain (over 10 μm) and fine-grain (under 1 μm) crystals. We suggest the presence of a crystalline carbon nitride phase corresponding to an α-C3N4 structure (isomorphic to α-Si3N4), which may also be a stable hard material.
Original language | English |
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Pages (from-to) | 514-518 |
Number of pages | 5 |
Journal | Diamond and Related Materials |
Volume | 5 |
Issue number | 3-5 |
DOIs | |
State | Published - 1 Jan 1996 |
Keywords
- Carbon nitride
- Microwave PECVD
- Transmission electron diffraction
- X-Ray photoelectron spectroscopy