Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition

L. C. Chen*, C. Y. Yang, D. M. Bhusari, K. H. Chen, Ming-Chang Lin, J. C. Lin, T. J. Chuang

*Corresponding author for this work

Research output: Contribution to journalArticle

114 Scopus citations

Abstract

We report that carbon nitride thin films can be formed by microwave plasma-enhanced chemical vapor deposition (PECVD). Gas mixtures containing CH4, H2, and NH3 in various ratios were tried as the precursors, and a Si(100) wafer was used as the substrate. The films were characterized by X-ray photoelectron spectroscopy (XPS), and electron microscopy (both SEM and TEM). A Si content of about half of the carbon content was observed when the substrate temperature exceeded 1000 °C. Microscopic investigation revealed the coexistence of large-grain (over 10 μm) and fine-grain (under 1 μm) crystals. We suggest the presence of a crystalline carbon nitride phase corresponding to an α-C3N4 structure (isomorphic to α-Si3N4), which may also be a stable hard material.

Original languageEnglish
Pages (from-to)514-518
Number of pages5
JournalDiamond and Related Materials
Volume5
Issue number3-5
DOIs
StatePublished - 1 Jan 1996

Keywords

  • Carbon nitride
  • Microwave PECVD
  • Transmission electron diffraction
  • X-Ray photoelectron spectroscopy

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