Formation of C54-TiSi2 in titanium on nitrogen-ion-implanted (001)Si with a thin interposing Mo layer

S. L. Cheng; J. J. Jou; L. J. Chen; Bing-Yue Tsui

doi:10.1557/JMR.1999.0278

Formation of C54-TiSi₂ in titanium on nitrogen-ion-implanted (001)Si with a thin interposing Mo layer

S. L. Cheng^*, J. J. Jou, L. J. Chen, Bing-Yue Tsui

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Formation of TiSi₂ in titanium on nitrogen-implanted (001)Si with a thin interposing Mo layer has been investigated. The presence of a Mo thin interposing layer was found to decrease the formation temperature of C54-TiSi₂ by about 100°C. A ternary (Ti, Mo) Si₂ phase was found to distribute in the silicide layer. The ternary compound is conjectured to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi₂. On the other hand, the effect of grain boundary for decreasing transformation temperature was found to be less crucial. For Ti/Mo bilayer on 30 keV BF₂⁺ or As⁺ + 20 keV, 1 × 10¹⁵/cm² N₂⁺ implanted samples, a continuous C54-TiSi₂ layer was found to form in all samples annealed at 650-950°C. The presence of nitrogen atoms in TiSi₂ is thought to lower the silicide/silicon interface energy and/or the silicide surface energy to maintain the integrity of the C54-TiSi₂ layer at high temperatures.

Original language	English
Pages (from-to)	2061-2069
Number of pages	9
Journal	Journal of Materials Research
Volume	14
Issue number	5
DOIs	https://doi.org/10.1557/JMR.1999.0278
State	Published - 1 Jan 1999

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title = "Formation of C54-TiSi2 in titanium on nitrogen-ion-implanted (001)Si with a thin interposing Mo layer",

abstract = "Formation of TiSi2 in titanium on nitrogen-implanted (001)Si with a thin interposing Mo layer has been investigated. The presence of a Mo thin interposing layer was found to decrease the formation temperature of C54-TiSi2 by about 100°C. A ternary (Ti, Mo) Si2 phase was found to distribute in the silicide layer. The ternary compound is conjectured to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi2. On the other hand, the effect of grain boundary for decreasing transformation temperature was found to be less crucial. For Ti/Mo bilayer on 30 keV BF2+ or As+ + 20 keV, 1 × 1015/cm2 N2+ implanted samples, a continuous C54-TiSi2 layer was found to form in all samples annealed at 650-950°C. The presence of nitrogen atoms in TiSi2 is thought to lower the silicide/silicon interface energy and/or the silicide surface energy to maintain the integrity of the C54-TiSi2 layer at high temperatures.",

author = "Cheng, {S. L.} and Jou, {J. J.} and Chen, {L. J.} and Bing-Yue Tsui",

year = "1999",

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TY - JOUR

T1 - Formation of C54-TiSi2 in titanium on nitrogen-ion-implanted (001)Si with a thin interposing Mo layer

AU - Cheng, S. L.

AU - Jou, J. J.

AU - Chen, L. J.

AU - Tsui, Bing-Yue

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Formation of TiSi2 in titanium on nitrogen-implanted (001)Si with a thin interposing Mo layer has been investigated. The presence of a Mo thin interposing layer was found to decrease the formation temperature of C54-TiSi2 by about 100°C. A ternary (Ti, Mo) Si2 phase was found to distribute in the silicide layer. The ternary compound is conjectured to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi2. On the other hand, the effect of grain boundary for decreasing transformation temperature was found to be less crucial. For Ti/Mo bilayer on 30 keV BF2+ or As+ + 20 keV, 1 × 1015/cm2 N2+ implanted samples, a continuous C54-TiSi2 layer was found to form in all samples annealed at 650-950°C. The presence of nitrogen atoms in TiSi2 is thought to lower the silicide/silicon interface energy and/or the silicide surface energy to maintain the integrity of the C54-TiSi2 layer at high temperatures.

AB - Formation of TiSi2 in titanium on nitrogen-implanted (001)Si with a thin interposing Mo layer has been investigated. The presence of a Mo thin interposing layer was found to decrease the formation temperature of C54-TiSi2 by about 100°C. A ternary (Ti, Mo) Si2 phase was found to distribute in the silicide layer. The ternary compound is conjectured to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi2. On the other hand, the effect of grain boundary for decreasing transformation temperature was found to be less crucial. For Ti/Mo bilayer on 30 keV BF2+ or As+ + 20 keV, 1 × 1015/cm2 N2+ implanted samples, a continuous C54-TiSi2 layer was found to form in all samples annealed at 650-950°C. The presence of nitrogen atoms in TiSi2 is thought to lower the silicide/silicon interface energy and/or the silicide surface energy to maintain the integrity of the C54-TiSi2 layer at high temperatures.

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U2 - 10.1557/JMR.1999.0278

DO - 10.1557/JMR.1999.0278

M3 - Article

AN - SCOPUS:0032653487

VL - 14

SP - 2061

EP - 2069

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 5

ER -

Formation of C54-TiSi2 in titanium on nitrogen-ion-implanted (001)Si with a thin interposing Mo layer

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Formation of C54-TiSi₂ in titanium on nitrogen-ion-implanted (001)Si with a thin interposing Mo layer