The effects of nitrogen ion implantation and the phase formation during annealing of Ti/Mo bilayer on nitrogen implanted (001) Si have been investigated. The presence of Mo thin interposing layer was found to decrease the formation temperature of 054-TiSi2 by about 100°C in both blank and nitrogen ion implanted (001) Si. A ternary (Ti, Mo) Si2 phase, found to distribute in the suicide layer, is proposed to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi2. On the contrary, the effect of the grain boundary for lowering the transformation temperature was found to be less crucial.
- Nitrogen ion implantation
- Phase formation