Formation of C54-TiSi2 enhanced by a thin interposing Mo layer on nitrogen ion implanted (001)Si

S. L. Clieng*, J. J. Jou, L. J. Chen, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The effects of nitrogen ion implantation and the phase formation during annealing of Ti/Mo bilayer on nitrogen implanted (001) Si have been investigated. The presence of Mo thin interposing layer was found to decrease the formation temperature of 054-TiSi2 by about 100°C in both blank and nitrogen ion implanted (001) Si. A ternary (Ti, Mo) Si2 phase, found to distribute in the suicide layer, is proposed to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi2. On the contrary, the effect of the grain boundary for lowering the transformation temperature was found to be less crucial.

Original languageEnglish
Pages (from-to)346-350
Number of pages5
JournalMaterials Chemistry and Physics
Volume54
Issue number1-3
DOIs
StatePublished - 1 Jul 1998

Keywords

  • Annealing
  • Nitrogen ion implantation
  • Phase formation

Fingerprint Dive into the research topics of 'Formation of C54-TiSi<sub>2</sub> enhanced by a thin interposing Mo layer on nitrogen ion implanted (001)Si'. Together they form a unique fingerprint.

  • Cite this