Abstract
The effects of nitrogen ion implantation and the phase formation during annealing of Ti/Mo bilayer on nitrogen implanted (001) Si have been investigated. The presence of Mo thin interposing layer was found to decrease the formation temperature of 054-TiSi2 by about 100°C in both blank and nitrogen ion implanted (001) Si. A ternary (Ti, Mo) Si2 phase, found to distribute in the suicide layer, is proposed to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi2. On the contrary, the effect of the grain boundary for lowering the transformation temperature was found to be less crucial.
Original language | English |
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Pages (from-to) | 346-350 |
Number of pages | 5 |
Journal | Materials Chemistry and Physics |
Volume | 54 |
Issue number | 1-3 |
DOIs | |
State | Published - 1 Jul 1998 |
Keywords
- Annealing
- Nitrogen ion implantation
- Phase formation