Formation of C54-TiSi2 enhanced by a thin interposing Mo layer on nitrogen ion implanted (001)Si

S. L. Clieng; J. J. Jou; L. J. Chen; Bing-Yue Tsui

doi:10.1016/S0254-0584(98)00054-6

Formation of C54-TiSi₂ enhanced by a thin interposing Mo layer on nitrogen ion implanted (001)Si

S. L. Clieng^*, J. J. Jou, L. J. Chen, Bing-Yue Tsui

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The effects of nitrogen ion implantation and the phase formation during annealing of Ti/Mo bilayer on nitrogen implanted (001) Si have been investigated. The presence of Mo thin interposing layer was found to decrease the formation temperature of 054-TiSi₂ by about 100°C in both blank and nitrogen ion implanted (001) Si. A ternary (Ti, Mo) Si₂ phase, found to distribute in the suicide layer, is proposed to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi₂. On the contrary, the effect of the grain boundary for lowering the transformation temperature was found to be less crucial.

Original language	English
Pages (from-to)	346-350
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	54
Issue number	1-3
DOIs	https://doi.org/10.1016/S0254-0584(98)00054-6
State	Published - 1 Jul 1998

Keywords

Annealing
Nitrogen ion implantation
Phase formation

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title = "Formation of C54-TiSi2 enhanced by a thin interposing Mo layer on nitrogen ion implanted (001)Si",

abstract = "The effects of nitrogen ion implantation and the phase formation during annealing of Ti/Mo bilayer on nitrogen implanted (001) Si have been investigated. The presence of Mo thin interposing layer was found to decrease the formation temperature of 054-TiSi2 by about 100°C in both blank and nitrogen ion implanted (001) Si. A ternary (Ti, Mo) Si2 phase, found to distribute in the suicide layer, is proposed to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi2. On the contrary, the effect of the grain boundary for lowering the transformation temperature was found to be less crucial.",

keywords = "Annealing, Nitrogen ion implantation, Phase formation",

author = "Clieng, {S. L.} and Jou, {J. J.} and Chen, {L. J.} and Bing-Yue Tsui",

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T1 - Formation of C54-TiSi2 enhanced by a thin interposing Mo layer on nitrogen ion implanted (001)Si

AU - Clieng, S. L.

AU - Jou, J. J.

AU - Chen, L. J.

AU - Tsui, Bing-Yue

PY - 1998/7/1

Y1 - 1998/7/1

N2 - The effects of nitrogen ion implantation and the phase formation during annealing of Ti/Mo bilayer on nitrogen implanted (001) Si have been investigated. The presence of Mo thin interposing layer was found to decrease the formation temperature of 054-TiSi2 by about 100°C in both blank and nitrogen ion implanted (001) Si. A ternary (Ti, Mo) Si2 phase, found to distribute in the suicide layer, is proposed to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi2. On the contrary, the effect of the grain boundary for lowering the transformation temperature was found to be less crucial.

AB - The effects of nitrogen ion implantation and the phase formation during annealing of Ti/Mo bilayer on nitrogen implanted (001) Si have been investigated. The presence of Mo thin interposing layer was found to decrease the formation temperature of 054-TiSi2 by about 100°C in both blank and nitrogen ion implanted (001) Si. A ternary (Ti, Mo) Si2 phase, found to distribute in the suicide layer, is proposed to provide more heterogeneous nucleation sites to enhance the formation of C54-TiSi2. On the contrary, the effect of the grain boundary for lowering the transformation temperature was found to be less crucial.

KW - Annealing

KW - Nitrogen ion implantation

KW - Phase formation

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EP - 350

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