Formation of buried oxide in silicon using separation by plasma implantation of oxygen

Jingbao Liu*, S. Sundar Kumar Iyer, Chen-Ming Hu, Nathan W. Cheung, Ron Gronsky, Jing Min, Paul Chu

*Corresponding author for this work

Research output: Contribution to journalArticle

51 Scopus citations

Abstract

Plasma immersion ion implantation (PIII) is used to fabricate buried oxide layers in silicon. This "separation by plasma implantation of oxygen" (SPIMOX) technique can achieve a nominal oxygen atom dose of 2×10 17cm-2 in implantation time of about 3 min. SPIMOX is thus presented as a practical high-throughput process for manufacturing silicon-on-insulator. In the SPIMOX samples prepared, three distinct modes of buried oxide microstructure formation are identified and related to the as-implanted oxygen profiles. A first-order model based on oxygen transport and oxide precipitation explains the formation mechanisms of these three types of SPIMOX layers.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1 Dec 1995

Fingerprint Dive into the research topics of 'Formation of buried oxide in silicon using separation by plasma implantation of oxygen'. Together they form a unique fingerprint.

  • Cite this