Formation of 3D Ge quantum dots array for advanced photovolatics in layer-cake technique

C. Y. Chien, Y. R. Chang, R. N. Chang, M. S. Lee, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Placement of quantum dots (QDs) and insight into QD's basic internal structure and optical properties lay nature cornerstones for advanced photonic devices. We report a manageable growth method for placing dense three-dimensional Ge QD arrays in a uniform or a grading size distribution, using thermal oxidation of poly-SiGe in layer-cake techniques. The QD size and spatial density in each stack could be well modulated by Ge content in poly-Si1-xGex, oxidation and underlay buffer layer conditions. Size-dependent internal structure, strain, and photoluminesce properties of Ge QDs are systematically investigated. Optimization of processing conditions was carried out for producing dense Ge QD arrays for maximizing photovoltaic efficiency.

Original languageEnglish
Title of host publication2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages924-927
Number of pages4
DOIs
StatePublished - 1 Dec 2010
Event2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
Duration: 17 Aug 201020 Aug 2010

Publication series

Name2010 10th IEEE Conference on Nanotechnology, NANO 2010

Conference

Conference2010 10th IEEE Conference on Nanotechnology, NANO 2010
CountryKorea, Republic of
CityIlsan, Gyeonggi-Do
Period17/08/1020/08/10

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