Shallow silicided n+p junctions have been formed by implanting arsenic ions into Pt or PtSi films followed by low-temperature furnace annealing in the N2 ambient. Shallow junction diodes with a junction depth of about 0.1 μm, a forward ideality factor lower than 1.02, and a reverse leakage current density less than 5 nA/cm2 at -5 V was achieved with 750 °C, 90-min annealing. Annealing at higher temperatures results in junction degradation due to Pt diffusion from PtSi into the Si substrate. This may be significantly improved by F+ implantation following the As+ implantation. The shallow junction processed with the As +/F+ dual implantation and a subsequent anneal at 800 °C shows even slightly better characteristics than those annealed at 750 °C without F+ implantation.