Formation and characterization of high-performance silicon thin-film transistors with and without location-controlled grain boundary

Chan Yu Liao*, Hsiao Chun Lin, Chao Lung Wang, I. Che Lee, Chia Hsin Chou, Yu Ren Li, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This paper reports the demonstration of structural effects on excimer laser crystallization (ELC) for the Si strip with a recessed-channel structure on the silicon nitride under-layer (RCS-ULN). We revealed that a single location-controlled grain boundary (GB) oriented normal to the Si strip in the middle site without any other GB in the recessed region can be attained via ELC for the RCS-ULN structures with a short recessed region between neighboring long thick regions in a narrow Si strip. This can be attributed to the effective production of a significant 2D lateral thermal gradient in the recessed region and neighboring thick regions. Consequently, the RCS-ULN TFTs fabricated at the position one-half of such an optimal recessed region can achieve a superior field-effect mobility of 670 cm 2 V -1 · s -1 with minor performance variations since the single-crystal-like Si channel has been adopted.

Original languageEnglish
Article number105002
JournalJournal of Micromechanics and Microengineering
Volume27
Issue number10
DOIs
StatePublished - 12 Sep 2017

Keywords

  • excimer laser crystallization (ELC)
  • light absorption layer
  • location-controlled grain boundary
  • polycrystalline silicon (poly-Si)
  • thin-film transistor (TFT)

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