Fluorinated CMOS HfO2 for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF4 Plasma Passivation

Woei Cherng Wu*, Chao Sung Lai, Huai Hsien Chiu, Jer Chyi Wang, Pai Chi Chou, Tien-Sheng Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Fluorine distribution engineering in HfO2 to get higher performance (HP EOT=1.2nm) and low stand-by power (LSTP EOT=1.8nm) CMOS device with 48% driving current enhancement for HP, 73% leakage reduction for LSTP were demonstrated. Better uniformity (50% VtU and 9% IdU reduction) and excellent reliability, P/NBTI, of n-/p-MOSFET were achieved A new physical model of fluorine re-incorporation was proposed to explain the turnaround of NBTI and the much improvement of NBTI for HP and LP device.

Original languageEnglish
Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages416-419
Number of pages4
DOIs
StatePublished - 15 Dec 2010
Event2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
Duration: 14 Sep 201016 Sep 2010

Publication series

Name2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Conference

Conference2010 European Solid State Device Research Conference, ESSDERC 2010
CountrySpain
CitySevilla
Period14/09/1016/09/10

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