Fluctuation-induced tunneling conduction through RuO2 nanowire contacts

Yong Han Lin*, Juhn-Jong Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A good understanding of the electronic conduction processes through nanocontacts is a crucial step for the implementation of functional nanoelectronic devices. We have studied the current- voltage (I - V) characteristics of nanocontacts between single metallic RuO2 nanowires and contacting Au electrodes, which were pre-patterned by simple photolithography. Both the temperature behavior of contact resistance in the low-bias voltage ohmic regime and the I - V curves in the high-bias voltage non-ohmic regime have been investigated. We found that the electronic conduction processes in the wide temperature interval 1-300 K can be well described by the fluctuation-induced tunneling (FIT) conduction theory. Taken together with our previous work [Lin, Nanotechnology 19, 365201 (2008)], where the nanocontacts were fabricated by delicate electron-beam lithography, our study demonstrates the general validity of the FIT model in characterizing electronic nanocontacts.

Original languageEnglish
Article number064318
Number of pages5
JournalJournal of Applied Physics
Volume110
Issue number6
DOIs
StatePublished - 15 Sep 2011

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