Flower-like distributed self-organized Ge dots on patterned Si (001) substrates

Huang Ming Lee*, Tsung Hsi Yang, Guangli Luo, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Self-organized Ge dots were obtained utilizing ultra high vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The dimensions of these etched Si mesa are 65/23/200 nm in diameter/height/period. The sizes and arrangement of the Ge dots were characterized by scanning electron microscopy and atomic force microscopy. The Ge dots have an average base width of 10 nm and the size is quite uniform. Due to the energetically favorable sites, the Ge dots tend to form homocentrically along the Si mesa edge, and their distribution is flower-like.

Original languageEnglish
Pages (from-to)L718-L720
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number6 B
DOIs
StatePublished - 15 Jun 2003

Keywords

  • Atomic force microscopy
  • Electron beam lithography
  • Mesa
  • Scanning electron microscopy
  • Self-organized Ge dots
  • Ultra high vacuum chemical molecular epitaxy

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