Flow rate's influence on low temperature silicon oxide deposited by atmospheric pressure plasma jet for organic thin film transistor application

Kow-Ming Chang, S. S. Huang, C. H. Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low temperature processes and high quality gate insulator are very important for organic thin film transistors (OTFTs). We utilized atmospheric pressure plasma jet (APPJ) to deposit silicon oxide as gate insulator of OTFTs at low temperature. We found carrier gas's flow rate would influence the deposition mechanism which lead to influence surface roughness and film quality. Leakage current density of our proposed silicon oxide was about 2.53E-8 A/cm 2 at 0.5 MV/cm. Our proposed OTFTs shows a low subthreshold swing of only 700 mV/dec., a low threshold voltage of -0.8 V, a low operation voltage of -2 V. The low-voltage OTFTs would reduce the power consummation of flexible display.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages255-264
Number of pages10
Edition5
DOIs
StatePublished - 1 Dec 2010
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 11 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period11/10/1015/10/10

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    Chang, K-M., Huang, S. S., & Cheng, C. H. (2010). Flow rate's influence on low temperature silicon oxide deposited by atmospheric pressure plasma jet for organic thin film transistor application. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 255-264). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481245