Flow-rate modulation epitaxy of InP by metalorganic chemical vapor deposition

Wei-Kuo Chen*, Jyh-Cheng Chen, J. F. Chen, C. R. Wie, P. L. Liu, D. M. Hwang

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations


We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.

Original languageEnglish
Pages (from-to)100-103
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 28 Nov 1989

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