@inproceedings{fe27b90b58fd4fafa235a982d0994773,
title = "Flip-chip packaging of In 0.6Ga 0.4As MHEMT device on low-cost organic substrate for W-band applications",
abstract = "A discrete low noise In 0.6Ga 0.4As MHEMT device with 150 nm gate length was flip-chip assembled on the low-cost RO3210 organic substrate for wireless communication applications. The measured DC characteristics were very similar before and after flip-chip assembly. The flip-chip packaged MHEMT device showed a high drain current density of 516 mA/mm and a maximum transconductance of 576 mS/mm at a V DS of 0.8 V. The insertion gain of the flip-chip packaged device was decayed less than 2 dB up to 100 GHz as compared to the data of bare die. Moreover, the measured minimum noise figure was less than 2 dB as measured at V Ds of 0.7 V and V Gs of -0.7 V in the frequency range from 20 to 64 GHz for the device after flip-chip assembly. The excellent performance of the flip-chip packaged MHEMT device demonstrates the feasibility of using low cost organic substrate for high frequency applications up to W band.",
author = "Lim, {Wee Chin} and Wang, {Chin Te} and Kuo, {Chien I.} and Hsu, {Li Han} and Tsai, {Szu Ping} and Chang, {Edward Yi}",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3485616",
language = "English",
isbn = "9781607681823",
series = "ECS Transactions",
number = "13",
pages = "171--176",
booktitle = "State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52",
edition = "13",
note = "null ; Conference date: 10-10-2010 Through 15-10-2010",
}