Flip-chip packaging of In 0.6Ga 0.4As MHEMT device on low-cost organic substrate for W-band applications

Wee Chin Lim*, Chin Te Wang, Chien I. Kuo, Li Han Hsu, Szu Ping Tsai, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A discrete low noise In 0.6Ga 0.4As MHEMT device with 150 nm gate length was flip-chip assembled on the low-cost RO3210 organic substrate for wireless communication applications. The measured DC characteristics were very similar before and after flip-chip assembly. The flip-chip packaged MHEMT device showed a high drain current density of 516 mA/mm and a maximum transconductance of 576 mS/mm at a V DS of 0.8 V. The insertion gain of the flip-chip packaged device was decayed less than 2 dB up to 100 GHz as compared to the data of bare die. Moreover, the measured minimum noise figure was less than 2 dB as measured at V Ds of 0.7 V and V Gs of -0.7 V in the frequency range from 20 to 64 GHz for the device after flip-chip assembly. The excellent performance of the flip-chip packaged MHEMT device demonstrates the feasibility of using low cost organic substrate for high frequency applications up to W band.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
Pages171-176
Number of pages6
Edition13
DOIs
StatePublished - 1 Dec 2010
EventState-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 10 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number13
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1015/10/10

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