Flip-chip packaging of In 0.6Ga 0.4As MHEMT device on low-cost organic substrate for W-band applications

Wee Chin Lim; Chin Te Wang; Chien I. Kuo; Li Han Hsu; Szu Ping Tsai; Edward Yi Chang

doi:10.1149/1.3485616

Flip-chip packaging of In _0.6Ga _0.4As MHEMT device on low-cost organic substrate for W-band applications

Wee Chin Lim^*, Chin Te Wang, Chien I. Kuo, Li Han Hsu, Szu Ping Tsai, Edward Yi Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A discrete low noise In _0.6Ga _0.4As MHEMT device with 150 nm gate length was flip-chip assembled on the low-cost RO3210 organic substrate for wireless communication applications. The measured DC characteristics were very similar before and after flip-chip assembly. The flip-chip packaged MHEMT device showed a high drain current density of 516 mA/mm and a maximum transconductance of 576 mS/mm at a V _DS of 0.8 V. The insertion gain of the flip-chip packaged device was decayed less than 2 dB up to 100 GHz as compared to the data of bare die. Moreover, the measured minimum noise figure was less than 2 dB as measured at V _Ds of 0.7 V and V _Gs of -0.7 V in the frequency range from 20 to 64 GHz for the device after flip-chip assembly. The excellent performance of the flip-chip packaged MHEMT device demonstrates the feasibility of using low cost organic substrate for high frequency applications up to W band.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
Pages	171-176
Number of pages	6
Edition	13
DOIs	https://doi.org/10.1149/1.3485616
State	Published - 1 Dec 2010
Event	State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting - Las Vegas, NV, United States Duration: 10 Oct 2010 → 15 Oct 2010

Publication series

Name	ECS Transactions
Number	13
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting
Country	United States
City	Las Vegas, NV
Period	10/10/10 → 15/10/10

Access to Document

10.1149/1.3485616

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Lim, W. C., Wang, C. T., Kuo, C. I., Hsu, L. H., Tsai, S. P., & Chang, E. Y. (2010). Flip-chip packaging of In _0.6Ga _0.4As MHEMT device on low-cost organic substrate for W-band applications. In State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 (13 ed., pp. 171-176). (ECS Transactions; Vol. 33, No. 13). https://doi.org/10.1149/1.3485616

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title = "Flip-chip packaging of In 0.6Ga 0.4As MHEMT device on low-cost organic substrate for W-band applications",

abstract = "A discrete low noise In 0.6Ga 0.4As MHEMT device with 150 nm gate length was flip-chip assembled on the low-cost RO3210 organic substrate for wireless communication applications. The measured DC characteristics were very similar before and after flip-chip assembly. The flip-chip packaged MHEMT device showed a high drain current density of 516 mA/mm and a maximum transconductance of 576 mS/mm at a V DS of 0.8 V. The insertion gain of the flip-chip packaged device was decayed less than 2 dB up to 100 GHz as compared to the data of bare die. Moreover, the measured minimum noise figure was less than 2 dB as measured at V Ds of 0.7 V and V Gs of -0.7 V in the frequency range from 20 to 64 GHz for the device after flip-chip assembly. The excellent performance of the flip-chip packaged MHEMT device demonstrates the feasibility of using low cost organic substrate for high frequency applications up to W band.",

author = "Lim, {Wee Chin} and Wang, {Chin Te} and Kuo, {Chien I.} and Hsu, {Li Han} and Tsai, {Szu Ping} and Chang, {Edward Yi}",

year = "2010",

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doi = "10.1149/1.3485616",

language = "English",

isbn = "9781607681823",

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note = "null ; Conference date: 10-10-2010 Through 15-10-2010",

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Lim, WC, Wang, CT, Kuo, CI, Hsu, LH, Tsai, SP & Chang, EY 2010, Flip-chip packaging of In _0.6Ga _0.4As MHEMT device on low-cost organic substrate for W-band applications. in State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52. 13 edn, ECS Transactions, no. 13, vol. 33, pp. 171-176, State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3485616

Flip-chip packaging of In _0.6Ga _0.4As MHEMT device on low-cost organic substrate for W-band applications. / Lim, Wee Chin; Wang, Chin Te; Kuo, Chien I.; Hsu, Li Han; Tsai, Szu Ping; Chang, Edward Yi.

State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52. 13. ed. 2010. p. 171-176 (ECS Transactions; Vol. 33, No. 13).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Flip-chip packaging of In 0.6Ga 0.4As MHEMT device on low-cost organic substrate for W-band applications

AU - Lim, Wee Chin

AU - Wang, Chin Te

AU - Kuo, Chien I.

AU - Hsu, Li Han

AU - Tsai, Szu Ping

AU - Chang, Edward Yi

PY - 2010/12/1

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N2 - A discrete low noise In 0.6Ga 0.4As MHEMT device with 150 nm gate length was flip-chip assembled on the low-cost RO3210 organic substrate for wireless communication applications. The measured DC characteristics were very similar before and after flip-chip assembly. The flip-chip packaged MHEMT device showed a high drain current density of 516 mA/mm and a maximum transconductance of 576 mS/mm at a V DS of 0.8 V. The insertion gain of the flip-chip packaged device was decayed less than 2 dB up to 100 GHz as compared to the data of bare die. Moreover, the measured minimum noise figure was less than 2 dB as measured at V Ds of 0.7 V and V Gs of -0.7 V in the frequency range from 20 to 64 GHz for the device after flip-chip assembly. The excellent performance of the flip-chip packaged MHEMT device demonstrates the feasibility of using low cost organic substrate for high frequency applications up to W band.

AB - A discrete low noise In 0.6Ga 0.4As MHEMT device with 150 nm gate length was flip-chip assembled on the low-cost RO3210 organic substrate for wireless communication applications. The measured DC characteristics were very similar before and after flip-chip assembly. The flip-chip packaged MHEMT device showed a high drain current density of 516 mA/mm and a maximum transconductance of 576 mS/mm at a V DS of 0.8 V. The insertion gain of the flip-chip packaged device was decayed less than 2 dB up to 100 GHz as compared to the data of bare die. Moreover, the measured minimum noise figure was less than 2 dB as measured at V Ds of 0.7 V and V Gs of -0.7 V in the frequency range from 20 to 64 GHz for the device after flip-chip assembly. The excellent performance of the flip-chip packaged MHEMT device demonstrates the feasibility of using low cost organic substrate for high frequency applications up to W band.

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