Flicker noise in nanoscale pMOSFETs with mobility enhancement engineering and dynamic body biases

Kuo Liang Yeh*, Chih You Ku, Wei Lun Hong, Jyh-Chyurn Guo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The uni-axial compressive strain from e-SiGe S/D combined with dynamic body biases effect on flicker noise of pMOSFETs is presented in this paper. This compressive strain contributes higher mobility but the worse flicker noise in terms of higher SID/ID2 becomes a potential killer to RF/analog circuits. Forward body biases (FBB) can reduce the flicker noise but the degraded body bias effect in strained pMOSFETs makes it not as efficient as the standard ones without strain. Hooge's mobility fluctuation model is adopted to explain the uni-axial strain and dynamic body biases effect on flicker noise. The increase of Hooge parameter αH is identified the key factor responsible the degraded flicker noise in strained pMOSFETs.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
Pages347-350
Number of pages4
DOIs
StatePublished - 27 Oct 2009
Event2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009 - Boston, MA, United States
Duration: 7 Jun 20099 Jun 2009

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517

Conference

Conference2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
CountryUnited States
CityBoston, MA
Period7/06/099/06/09

Keywords

  • Body bias
  • Flicker noise
  • Mobility
  • pMOSFET
  • Strain

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