Flexible one diode-one resistor crossbar resistive-switching memory

Jiun Jia Huang; Tuo-Hung Hou; Chung Wei Hsu; Yi Ming Tseng; Wen Hsiung Chang; Wen Yueh Jang; Chen Hsi Lin

doi:10.1143/JJAP.51.04DD09

Flexible one diode-one resistor crossbar resistive-switching memory

Jiun Jia Huang^*, Tuo-Hung Hou, Chung Wei Hsu, Yi Ming Tseng, Wen Hsiung Chang, Wen Yueh Jang, Chen Hsi Lin

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We report the first demonstration of a flexible one diode-one resistor (1D1R) resistive-switching (RS) memory cell capable of high-density crossbar array implementation at an extremely low cost. A Ti/TiO ₂/Pt diode with a large rectifying ratio and a stable Ni/HfO ₂/Pt unipolar RS memory element have been fabricated on a polyimide substrate using only room-temperature processes. No significant degradation of the rectifying ratio of the TiO ₂ diode and the cycling variations, retention, and read disturb immunity of the HfO ₂ memory was observed in the bending state. The series 1D1R cell shows highly reproducible unipolar RS because of the low reset current of the HfO ₂ memory, which greatly mitigates the adverse effect of diode series resistance. Furthermore, the 1D1R cell can effectively suppress read interference and realize a crossbar array as large as 512 kbit.

Original language	English
Article number	04DD09
Pages (from-to)	1-5
Number of pages	5
Journal	Japanese journal of applied physics
Volume	51
Issue number	4S
DOIs	https://doi.org/10.1143/JJAP.51.04DD09
State	Published - 1 Apr 2012

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title = "Flexible one diode-one resistor crossbar resistive-switching memory",

abstract = "We report the first demonstration of a flexible one diode-one resistor (1D1R) resistive-switching (RS) memory cell capable of high-density crossbar array implementation at an extremely low cost. A Ti/TiO 2/Pt diode with a large rectifying ratio and a stable Ni/HfO 2/Pt unipolar RS memory element have been fabricated on a polyimide substrate using only room-temperature processes. No significant degradation of the rectifying ratio of the TiO 2 diode and the cycling variations, retention, and read disturb immunity of the HfO 2 memory was observed in the bending state. The series 1D1R cell shows highly reproducible unipolar RS because of the low reset current of the HfO 2 memory, which greatly mitigates the adverse effect of diode series resistance. Furthermore, the 1D1R cell can effectively suppress read interference and realize a crossbar array as large as 512 kbit.",

author = "Huang, {Jiun Jia} and Tuo-Hung Hou and Hsu, {Chung Wei} and Tseng, {Yi Ming} and Chang, {Wen Hsiung} and Jang, {Wen Yueh} and Lin, {Chen Hsi}",

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AU - Huang, Jiun Jia

AU - Hou, Tuo-Hung

AU - Hsu, Chung Wei

AU - Tseng, Yi Ming

AU - Chang, Wen Hsiung

AU - Jang, Wen Yueh

AU - Lin, Chen Hsi

PY - 2012/4/1

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N2 - We report the first demonstration of a flexible one diode-one resistor (1D1R) resistive-switching (RS) memory cell capable of high-density crossbar array implementation at an extremely low cost. A Ti/TiO 2/Pt diode with a large rectifying ratio and a stable Ni/HfO 2/Pt unipolar RS memory element have been fabricated on a polyimide substrate using only room-temperature processes. No significant degradation of the rectifying ratio of the TiO 2 diode and the cycling variations, retention, and read disturb immunity of the HfO 2 memory was observed in the bending state. The series 1D1R cell shows highly reproducible unipolar RS because of the low reset current of the HfO 2 memory, which greatly mitigates the adverse effect of diode series resistance. Furthermore, the 1D1R cell can effectively suppress read interference and realize a crossbar array as large as 512 kbit.

AB - We report the first demonstration of a flexible one diode-one resistor (1D1R) resistive-switching (RS) memory cell capable of high-density crossbar array implementation at an extremely low cost. A Ti/TiO 2/Pt diode with a large rectifying ratio and a stable Ni/HfO 2/Pt unipolar RS memory element have been fabricated on a polyimide substrate using only room-temperature processes. No significant degradation of the rectifying ratio of the TiO 2 diode and the cycling variations, retention, and read disturb immunity of the HfO 2 memory was observed in the bending state. The series 1D1R cell shows highly reproducible unipolar RS because of the low reset current of the HfO 2 memory, which greatly mitigates the adverse effect of diode series resistance. Furthermore, the 1D1R cell can effectively suppress read interference and realize a crossbar array as large as 512 kbit.

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Flexible one diode-one resistor crossbar resistive-switching memory

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