Flexible non-volatile memory based on indium-gallium-zinc-oxide with excellent reliability and flexibility

Yang Shun Fan, Ching Hui Hsu, Chih Hsiang Chang, Wei Hsun Huang, Ming Chang Yu, Po-Tsun Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10 4 pulse endurance, 10 4 s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages1820-1821
Number of pages2
StatePublished - 1 Dec 2012
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameProceedings of the International Display Workshops
Volume3
ISSN (Print)1883-2490

Conference

Conference19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
CountryJapan
CityKyoto
Period4/12/127/12/12

Keywords

  • Flexible
  • IGZO
  • Non-volatile Memory
  • Reliability
  • RRAM

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  • Cite this

    Fan, Y. S., Hsu, C. H., Chang, C. H., Huang, W. H., Yu, M. C., & Liu, P-T. (2012). Flexible non-volatile memory based on indium-gallium-zinc-oxide with excellent reliability and flexibility. In Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 (pp. 1820-1821). (Proceedings of the International Display Workshops; Vol. 3).